| Автор | Jong-Won Lim |
| Автор | Ho-Kyun Ahn |
| Автор | Hong-Gu Ji |
| Автор | Woo-Jin Chang |
| Автор | Jae-Kyoung Mun |
| Автор | Haecheon Kim |
| Дата выпуска | 2004-12-01 |
| dc.description | We report the fabrication of a 0.12 µm T-gate with a silicon nitride assisted process. A two-step etch process was performed to define the gate footprint in the SiN<sub>x</sub>. The SiN<sub>x</sub> was etched either by dry etching (RIE) alone or by using a combination of wet and dry etching. The gate recessing was done in two steps including a wet etching for the removal of the damaged surface layer and a dry etching for the narrow recess. We have seen that the increases of the cut-off frequency f<sub>T</sub> and the maximum oscillation frequency f<sub>max</sub> are 39% and 16%, respectively. This was believed to be due to a remarkable decrease of the gate-source and gate-drain capacitances by 25% and 18.3%, respectively. The improvement in RF performance can be understood in terms of the decrease in parasitic capacitances due to SiN<sub>x</sub> and the gate recess etching method. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2004 IOP Publishing Ltd |
| Название | Fabrication and characteristics of 0.12 µm AlGaAs/InGaAs/GaAs pseudomorphic HEMT using a silicon nitride assisted process |
| Тип | paper |
| DOI | 10.1088/0268-1242/19/12/015 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 19 |
| Первая страница | 1416 |
| Последняя страница | 1421 |
| Аффилиация | Jong-Won Lim; High Speed SoC Research Department, Basic Research Lab, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea |
| Аффилиация | Ho-Kyun Ahn; High Speed SoC Research Department, Basic Research Lab, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea |
| Аффилиация | Hong-Gu Ji; High Speed SoC Research Department, Basic Research Lab, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea |
| Аффилиация | Woo-Jin Chang; High Speed SoC Research Department, Basic Research Lab, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea |
| Аффилиация | Jae-Kyoung Mun; High Speed SoC Research Department, Basic Research Lab, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea |
| Аффилиация | Haecheon Kim; High Speed SoC Research Department, Basic Research Lab, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea |
| Выпуск | 12 |
