| Автор | Antonio J García-Loureiro |
| Автор | Juan M López-González |
| Дата выпуска | 2004-03-01 |
| dc.description | In this paper we study the amount of electron quasi-Fermi level splitting in the emitter–base junction of single and double heterojunction bipolar transistors using a new numerical model that includes Fermi–Dirac statistics and base recombination current. The degree of splitting is different using our model than with previous models when high voltage or high doping levels are used. In order to illustrate its features, the model is applied to the study of collector current HBTs and DHBTs. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2004 IOP Publishing Ltd |
| Название | Electron quasi-Fermi level splitting at the base–emitter junction of HBTs and DHBTs |
| Тип | paper |
| DOI | 10.1088/0268-1242/19/3/048 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 19 |
| Первая страница | 552 |
| Последняя страница | 557 |
| Выпуск | 3 |
