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Автор S V Novikov
Автор K W Edmonds
Автор A D Giddings
Автор K Y Wang
Автор C R Staddon
Автор R P Campion
Автор B L Gallagher
Автор C T Foxon
Дата выпуска 2004-03-01
dc.description Cubic (zinc-blende) Ga<sub>1−x</sub>Mn<sub>x</sub>N layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger electron spectroscopy and secondary ion mass spectroscopy studies clearly confirmed the incorporation of Mn into cubic GaN, the Mn being uniformly distributed through the layer. X-ray diffraction studies demonstrated that the Mn-doped GaN films are cubic and do not show phase separation up to a Mn concentration of x < 0.1. p-type conductivity for the cubic Ga<sub>1−x</sub>Mn<sub>x</sub>N layers was observed for a wide range of the Mn doping levels. The measured hole concentration at room temperature depends nonlinearly on the Mn incorporation and varies from 3 × 10<sup>16</sup> to 5 × 10<sup>18</sup> cm<sup>−3</sup>.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2004 IOP Publishing Ltd
Название P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy
Тип lett
DOI 10.1088/0268-1242/19/3/L02
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 19
Первая страница L13
Последняя страница L16
Аффилиация S V Novikov; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
Аффилиация K W Edmonds; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
Аффилиация A D Giddings; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
Аффилиация K Y Wang; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
Аффилиация C R Staddon; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
Аффилиация R P Campion; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
Аффилиация B L Gallagher; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
Аффилиация C T Foxon; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
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