Magnetic field control of resonant tunnelling and electric field domain stability in wide quantum well GaAs/AlGaAs superlattices
Yu A Mityagin; V N Murzin; A A Pishchulin; Yu A Mityagin; P N Lebedev Physical Institute, 119991, Leninsky prosp., 53, Moscow, Russia; V N Murzin; P N Lebedev Physical Institute, 119991, Leninsky prosp., 53, Moscow, Russia; A A Pishchulin; P N Lebedev Physical Institute, 119991, Leninsky prosp., 53, Moscow, Russia
Журнал:
Semiconductor Science and Technology
Дата:
2004-04-01
Аннотация:
A transverse (in-plane) magnetic field (B = 0–7 T) was used to modify the shape of the tunnelling resonance between electronic states in neighbouring quantum wells of a superlattice and to investigate the effect of the modification of the tunnelling resonance profile on electric field domain stability and self-sustained current oscillations effect in GaAs/AlGaAs superlattices.
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