Автор |
N V Baidus |
Автор |
B N Zvonkov |
Автор |
P B Mokeeva |
Автор |
E A Uskova |
Автор |
S V Tikhov |
Автор |
M I Vasilevskiy |
Автор |
M J M Gomes |
Автор |
S A Filonovich |
Дата выпуска |
2004-04-01 |
dc.description |
This communication reports the results of experimental studies of the electroluminescence (EL) of forward-biased Schottky barrier (SB) diodes fabricated on heterostructures where an InAs/GaAs quantum dot (QD) layer was placed in the space charge region. In order to reach a higher EL wavelength, the QD layer was overgrown by a thin combined GaAs/InGaAs cladding layer. The heterostructures with Au SBs were found to show pronounced EL originating from several confined exciton states in InAs QDs which is higher at 300 K than at low temperatures. It is shown that the EL wavelength can be tuned within the 1.3–1.57 µm range by changing the thickness and composition of the combined GaAs/InGaAs capping layer. We discuss possible mechanisms of the injection of holes needed for the radiative recombination in the QDs and possibilities of improving the EL quantum yield. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Копирайт |
2004 IOP Publishing Ltd |
Название |
1.3–1.5 µm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures |
Тип |
paper |
DOI |
10.1088/0268-1242/19/4/154 |
Electronic ISSN |
1361-6641 |
Print ISSN |
0268-1242 |
Журнал |
Semiconductor Science and Technology |
Том |
19 |
Первая страница |
S469 |
Последняя страница |
S471 |
Выпуск |
4 |