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Автор N V Baidus
Автор B N Zvonkov
Автор P B Mokeeva
Автор E A Uskova
Автор S V Tikhov
Автор M I Vasilevskiy
Автор M J M Gomes
Автор S A Filonovich
Дата выпуска 2004-04-01
dc.description This communication reports the results of experimental studies of the electroluminescence (EL) of forward-biased Schottky barrier (SB) diodes fabricated on heterostructures where an InAs/GaAs quantum dot (QD) layer was placed in the space charge region. In order to reach a higher EL wavelength, the QD layer was overgrown by a thin combined GaAs/InGaAs cladding layer. The heterostructures with Au SBs were found to show pronounced EL originating from several confined exciton states in InAs QDs which is higher at 300 K than at low temperatures. It is shown that the EL wavelength can be tuned within the 1.3–1.57 µm range by changing the thickness and composition of the combined GaAs/InGaAs capping layer. We discuss possible mechanisms of the injection of holes needed for the radiative recombination in the QDs and possibilities of improving the EL quantum yield.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2004 IOP Publishing Ltd
Название 1.3–1.5 µm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures
Тип paper
DOI 10.1088/0268-1242/19/4/154
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 19
Первая страница S469
Последняя страница S471
Выпуск 4

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