| Автор | Hou, Lianping |
| Автор | Wang, Wei |
| Автор | Zhu, Hongliang |
| Дата выпуска | 2005-02-01 |
| dc.description | A novel 1.55 µm laser diode (LD) with monolithically integrated spot-size converter (SSC) is designed and fabricated using conventional photolithography and the chemical wet etching process. For the laser diode, a ridge double-core structure is employed. For the spot-size converter, a buried double-waveguide structure is incorporated. The laterally tapered active core is designed and optically combined with the thin passive core to control the size of the mode. The threshold current was measured to be 40 mA together with high slope efficiency of 0.35 W A<sup>−1</sup>. The beam divergence angles in the horizontal and vertical directions were as small as 14.9° and 18.2°, respectively. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2005 IOP Publishing Ltd |
| Название | 1.55 µm spot-size converter with monolithically integrated laser diode by conventional process |
| Тип | paper |
| DOI | 10.1088/0268-1242/20/2/015 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 20 |
| Первая страница | 185 |
| Последняя страница | 187 |
| Аффилиация | Hou, Lianping; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China |
| Аффилиация | Wang, Wei; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China |
| Аффилиация | Zhu, Hongliang; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China |
| Выпуск | 2 |
