| Автор | Malik, S |
| Автор | Ray, A K |
| Автор | Bruce, S |
| Дата выпуска | 2005-05-01 |
| dc.description | Low-frequency noise properties of 100 nm-thick Langmuir–Blodgett (LB) films of stearic acid in a metal–insulator–semiconductor (MIS) structure have been studied as a function of frequency and leakage current. The excess noise is found to be consistently 1/f-like within a range of frequencies between 1 Hz to 1 kHz when leakage current is varied from 10<sup>−8</sup> A to 10<sup>−4</sup> A. The sources of noises are identified; the trap density is estimated to be 3.6 × 10<sup>18</sup> m<sup>−2</sup> eV<sup>−1</sup>. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2005 IOP Publishing Ltd |
| Название | 1/f noise in Langmuir–Blodgett films on silicon |
| Тип | paper |
| DOI | 10.1088/0268-1242/20/5/022 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 20 |
| Первая страница | 453 |
| Последняя страница | 458 |
| Аффилиация | Malik, S; Department of Physics, Faculty of Science and Technology, Universiti Pendidikan Sultan Idris, 35900 Tanjong Malim, Malaysia |
| Аффилиация | Ray, A K; Nanotechnology Research Laboratory, Department of Materials, Queen Mary College, University of London, Mile End Road, London E1 4NS, UK |
| Аффилиация | Bruce, S; Ymergatan 26C, SE-75325, Uppsala, Sweden |
| Выпуск | 5 |
