| Автор | Feng, W |
| Автор | Pan, J Q |
| Автор | Wang, L |
| Автор | Liao, Z Y |
| Автор | Cheng, Y B |
| Автор | Chen, D B |
| Автор | Zhao, L J |
| Автор | Zhu, H L |
| Автор | Wang, W |
| Дата выпуска | 2007-08-01 |
| dc.description | An InGaAlAs multiquantum well (MQW) has been successfully overgrown on the absorptive InGaAsP corrugation for fabricating the 1.3 µm gain coupled distributed feedback (DFB) lasers. The absorptive InGaAsP corrugation was efficaciously preserved during the overgrowth of the InGaAlAs MQW active region. The absorptive InGaAsP corrugation has a relatively high intensity around the PL peak wavelength in comparison with that of the InGaAlAs MQW. The fabricated DFB laser exhibited a side mode suppression ratio of 40 dB together with a high single-mode yield of 90%. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2007 IOP Publishing Ltd |
| Название | 1.3 µm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation |
| Тип | paper |
| DOI | 10.1088/0268-1242/22/8/005 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 22 |
| Первая страница | 859 |
| Последняя страница | 862 |
| Последняя страница | 862 |
| Аффилиация | Feng, W; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China |
| Аффилиация | Pan, J Q; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China |
| Аффилиация | Wang, L; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China |
| Аффилиация | Liao, Z Y; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China |
| Аффилиация | Cheng, Y B; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China |
| Аффилиация | Chen, D B; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China |
| Аффилиация | Zhao, L J; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China |
| Аффилиация | Zhu, H L; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China |
| Аффилиация | Wang, W; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China |
| Выпуск | 8 |
