| Автор | Kontogiannopoulos, G P |
| Автор | Farmakis, F V |
| Автор | Kouvatsos, D N |
| Автор | Papaioannou, G J |
| Автор | Voutsas, A T |
| Дата выпуска | 2009-07-01 |
| dc.description | The voltage bias stress induced degradation of sequential lateral solidification (SLS) polysilicon thin film transistors (TFTs) is studied. The aim of this work is the investigation of the types of damage arising from the electrical stressing in the gate voltage range around V<sub>th</sub> ⩽ V<sub>GS,stress</sub> ⩽ V<sub>DS,stress</sub>/2 and for different drain-bias voltages. It is shown that the drain on-current variation (%) with stressing time for a defined gate voltage obeys a power–time-dependent law of the form At<sup>n</sup>. The parameters A and n of this law were determined in order to gain insight on degradation mechanisms in different stress regimes and to estimate the time to failure of our devices. Devices with different channel widths were compared, and their lifetime to failure was extracted. It was found that the magnitude of stress was lower for devices with narrower channel widths. By monitoring the threshold voltage variation and the percentage change of transconductance maximum in the linear regime of operation, it was verified that the threshold voltage degradation was mainly due to the contribution of G<sub>m,max</sub> to V<sub>th</sub> rather than severe carrier trapping. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2009 IOP Publishing Ltd |
| Название | Degradation and lifetime estimation of n-MOS SLS ELA polycrystalline TFTs during hot carrier stressing: effect of channel width in the region V<sub>th</sub> ⩽ V<sub>GS,stress</sub> ⩽ V<sub>DS,stress</sub>/2 |
| Тип | paper |
| DOI | 10.1088/0268-1242/24/7/075027 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 24 |
| Первая страница | 75027 |
| Последняя страница | 75032 |
| Аффилиация | Kontogiannopoulos, G P; Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi 15310, Greece |
| Аффилиация | Farmakis, F V; Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi 15310, Greece |
| Аффилиация | Kouvatsos, D N; Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi 15310, Greece |
| Аффилиация | Papaioannou, G J; Physics Department, University of Athens, Athens 157 84, Greece |
| Аффилиация | Voutsas, A T; Material and Device Applications Laboratory, Sharp Labs of America, 5700 NM Pacific Rim Blvd, Camas, WA 98607, USA |
| Выпуск | 7 |
