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Автор Sumpf, Bernd
Автор Fricke, Jörg
Автор Ressel, Peter
Автор Zorn, Martin
Автор Erbert, Götz
Автор Tränkle, Günther
Дата выпуска 2011-10-12
dc.description Reliability tests for highly efficient high-power 650 nm broad area diode lasers will be presented. The devices have a 5 nm thick single GaInP quantum well as an active layer, which is embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers. The devices with a stripe width of 100 µm and a cavity length of 1.5 mm were soldered on diamond submounts and mounted on standard C-mounts for an efficient heat removal. The test was performed at a temperature of 15 °C over a first period of 10 000 h at 1.1 W followed by a second period of 10 000 h at 1.2 W. Based on the aging test and assuming a 60% confidence level, the lower limit of the mean time to failure of 87 000 h was determined for the devices.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2011 IOP Publishing Ltd
Название 20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power
Тип paper
DOI 10.1088/0268-1242/26/10/105011
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 26
Первая страница 105011
Последняя страница 105017
Аффилиация Sumpf, Bernd;
Аффилиация Zorn, Martin;
Аффилиация Fricke, Jörg; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Аффилиация Ressel, Peter; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Аффилиация Erbert, Götz; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Аффилиация Tränkle, Günther; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
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