Автор |
Sumpf, Bernd |
Автор |
Fricke, Jörg |
Автор |
Ressel, Peter |
Автор |
Zorn, Martin |
Автор |
Erbert, Götz |
Автор |
Tränkle, Günther |
Дата выпуска |
2011-10-12 |
dc.description |
Reliability tests for highly efficient high-power 650 nm broad area diode lasers will be presented. The devices have a 5 nm thick single GaInP quantum well as an active layer, which is embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers. The devices with a stripe width of 100 µm and a cavity length of 1.5 mm were soldered on diamond submounts and mounted on standard C-mounts for an efficient heat removal. The test was performed at a temperature of 15 °C over a first period of 10 000 h at 1.1 W followed by a second period of 10 000 h at 1.2 W. Based on the aging test and assuming a 60% confidence level, the lower limit of the mean time to failure of 87 000 h was determined for the devices. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Копирайт |
2011 IOP Publishing Ltd |
Название |
20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power |
Тип |
paper |
DOI |
10.1088/0268-1242/26/10/105011 |
Electronic ISSN |
1361-6641 |
Print ISSN |
0268-1242 |
Журнал |
Semiconductor Science and Technology |
Том |
26 |
Первая страница |
105011 |
Последняя страница |
105017 |
Аффилиация |
Sumpf, Bernd; |
Аффилиация |
Zorn, Martin; |
Аффилиация |
Fricke, Jörg; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany |
Аффилиация |
Ressel, Peter; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany |
Аффилиация |
Erbert, Götz; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany |
Аффилиация |
Tränkle, Günther; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany |
Выпуск |
10 |