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Автор Czapkiewicz, M.
Автор Zagrajek, P.
Автор Wróbel, J.
Автор Grabecki, G.
Автор Fronc, K.
Автор Dietl, T.
Автор Ohno, Y.
Автор Matsuzaka, S.
Автор Ohno, H.
Дата выпуска 2008-04-01
dc.description The unexpected “0.7” plateau of conductance quantisation is usually observed for ballistic one-dimensional devices. In this work we study a quasi-ballistic quantum wire, for which the disorder-induced backscattering reduces the conductance quantisation steps. We find that the transmission probability resonances coexist with the anomalous plateau. The studies of these resonances as a function of the in-plane magnetic field and electron density point to the presence of spin polarisation at low carrier concentrations and constitute a method for the determination of the effective g-factor suitable for disordered quantum wires.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт Europhysics Letters Association
Название 0.7 anomaly and magnetotransport of disordered quantum wires
Тип lett
DOI 10.1209/0295-5075/82/27003
Electronic ISSN 1286-4854
Print ISSN 0295-5075
Журнал EPL (Europhysics Letters)
Том 82
Первая страница 27003
Последняя страница 27008
Аффилиация Czapkiewicz, M.; Instytut Fizyki Polskiej Akademii Nauk - al. Lotników 32/46, PL 02-668 Warszawa, Poland, EU
Аффилиация Zagrajek, P.; Instytut Fizyki Polskiej Akademii Nauk - al. Lotników 32/46, PL 02-668 Warszawa, Poland, EU
Аффилиация Wróbel, J.; Instytut Fizyki Polskiej Akademii Nauk - al. Lotników 32/46, PL 02-668 Warszawa, Poland, EU
Аффилиация Grabecki, G.; Instytut Fizyki Polskiej Akademii Nauk - al. Lotników 32/46, PL 02-668 Warszawa, Poland, EU
Аффилиация Fronc, K.; Instytut Fizyki Polskiej Akademii Nauk - al. Lotników 32/46, PL 02-668 Warszawa, Poland, EU
Аффилиация Dietl, T.; Instytut Fizyki Polskiej Akademii Nauk - al. Lotników 32/46, PL 02-668 Warszawa, Poland, EU; Instytut Fizyki Teoretycznej, Uniwersytet Warszawski - Hoża 69, PL 00-681 Warszawa, Poland, EU; ERATO Semiconductor Spintronics Project, Japan Science and Technology Agency - 1-18 Kitamemachi, Aoba-ku Sendai, 980-0023, Japan
Аффилиация Ohno, Y.; ERATO Semiconductor Spintronics Project, Japan Science and Technology Agency - 1-18 Kitamemachi, Aoba-ku Sendai, 980-0023, Japan
Аффилиация Matsuzaka, S.; ERATO Semiconductor Spintronics Project, Japan Science and Technology Agency - 1-18 Kitamemachi, Aoba-ku Sendai, 980-0023, Japan; Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University - Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
Аффилиация Ohno, H.; ERATO Semiconductor Spintronics Project, Japan Science and Technology Agency - 1-18 Kitamemachi, Aoba-ku Sendai, 980-0023, Japan; Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University - Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
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