We have applied our existing focused ion beam based nanoscale planar SNS bridge junction technology to the fabrication of series arrays, with a view to lumped array applications. Single junctions are created in a micrometre-width bilayer track (125 nm Nb on 75 nm Cu) by milling a trench 50 nm wide in the upper superconducting layer. Individual junctions with non-hysteretic, resistively-shunted current-voltage characteristics, critical current I_C~1 mA and characteristic voltage I_CR_N~50 µV at 4.2 K can be fabricated routinely. The characteristics of 10-junction series arrays at junction spacings of 0.2 µm to 1.6 µm have been studied at 4.2 K and above. Locking of all the junctions in the array under an applied microwave field is observed as the transition temperature is approached. This effect is achieved at a lower temperature for shorter junction spacings, suggesting a penetration depth-dependent electromagnetic coupling mechanism. Measurements of differential resistance versus current reveal the I_C distribution of individual junctions within the array. Spreads of critical current δI_C = I_Cmax/I_Cmin~1.5 at 4.2 K are typically observed. The spread in normal state resistance, R_N between junctions is negligible in comparison, as the unbroken normal metal layer shunts all of the junctions in the array. This allows locking to be achieved in spite of the appreciable spread in I_C.