| Автор | S Mankefors |
| Автор | P O Nilsson |
| Дата выпуска | 2001-02-05 |
| dc.description | Using ab initio calculations we have been able to show that the traditionally assumed charge redistribution on III-V semiconductor (110) surfaces has to be modified. The use of ab initio local ionicity calculations confirms that the relative polarity of the cation and anion increases but that the valence charge density locally decreases on both types of site at the surface. The decrease in charge is continuous as a function of atom radius and the overlap with the core levels diminishes. For small radii the cation loses less charge than the anion, which gives a positive electrostatic shift of the surface core level relative to the anion. Hence the traditional explanation for part of the surface core-level shift in terms of initial-state electrostatic effects is not satisfactory. Instead we believe the observed core-level shifts to be related to screening effects stemming from the dangling bonds in the final-state picture. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Revised charge redistribution on semiconductor III-V (110) surfaces |
| Тип | paper |
| DOI | 10.1088/0953-8984/13/5/304 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 13 |
| Первая страница | 823 |
| Последняя страница | 832 |
| Аффилиация | S Mankefors; Department of Physics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden |
| Аффилиация | P O Nilsson; Department of Physics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden |
| Выпуск | 5 |
