| Автор | K T Tsen |
| Дата выпуска | 2004-08-11 |
| dc.description | Picosecond Raman spectroscopy has been used to study non-equilibrium electron distributions and energy loss rate in a metal–organic-chemical-vapour-deposition-grown In<sub>x</sub>Ga<sub>1−x</sub>As<sub>1−y</sub>N<sub>y</sub> (x = 0.03 and y = 0.01) epilayer grown on GaAs substrate. It is demonstrated that for the photoexcited electron–hole pair density of electron distributions can be described very well by Fermi–Dirac distributions with effective electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of the excitation laser, the energy loss rate in In<sub>x</sub>Ga<sub>1−x</sub>As<sub>1−y</sub>N<sub>y</sub> is estimated to be about 64 meV ps<sup>−1</sup>. These experimental results are compared with those of GaAs and important implications are given. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Picosecond Raman scattering studies of carrier dynamics in In<sub>x</sub>Ga<sub>1−x</sub>As<sub>1−y</sub>N<sub>y</sub> |
| Тип | paper |
| DOI | 10.1088/0953-8984/16/31/022 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 16 |
| Первая страница | S3333 |
| Последняя страница | S3343 |
| Аффилиация | K T Tsen; Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287, USA |
| Выпуск | 31 |
