We present the first experimental study of the carrier density dependence of the composite fermion conductivity σ_xx^CF at Landau level filling factors ν = 1/2 and 3/2 in high-quality front-gated GaAs/Al_0.33Ga_0.67As heterostructures. Extracting α from the power law shows that . The measured is placed between the predicted value 3/4 in the strong random magnetic field regime, and 3/2 in the weak random magnetic field regime. Comparisons between our results and theory are discussed.