| Автор | Meftah, A F |
| Автор | Sengouga, N |
| Автор | Belghachi, A |
| Автор | Meftah, A M |
| Дата выпуска | 2009-05-27 |
| dc.description | In this paper, we report a detailed numerical study of the electron irradiation effect on the photoelectrical parameters of a GaAs based p<sup>+</sup>–n–n<sup>+</sup> solar cell which operates under an AM0 solar spectrum. As a consequence of irradiation different types of defects are created in the semiconductor lattice. These defects introduce energy levels in the gap of the material. The majority of studies dealing with irradiation-induced degradation in solar cells relate it mainly to recombination centres, which are deep levels lying near the mid gap. In the present study, numerical simulation is used to demonstrate that the irradiation-induced degradation is not solely due to recombination centres. Other less deep levels, or traps, play a major role in this degradation. When only recombination centres are taken into account, the short circuit current density (J<sub>sc</sub>) is hardly affected while the other cell output parameters such as the open circuit voltage (V<sub>oc</sub>), the conversion efficiency (η) and the fill factor (FF) are strongly deteriorated. However, if less deep levels or traps are taken into account together with recombination centres, J<sub>sc</sub> becomes sensitive to electron irradiation and the other output parameter deteriorations become less sensitive. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Numerical simulation of the effect of recombination centres and traps created by electron irradiation on the performance degradation of GaAs solar cells |
| Тип | paper |
| DOI | 10.1088/0953-8984/21/21/215802 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 21 |
| Первая страница | 215802 |
| Последняя страница | 215808 |
| Аффилиация | Meftah, A F; Laboratory of Metallic and Semiconducting Materials, Faculty of Science and Engineering, Mohamed Kheider University, BP 145, 07000 Biskra, Algeria ; |
| Аффилиация | Sengouga, N; Laboratory of Metallic and Semiconducting Materials, Faculty of Science and Engineering, Mohamed Kheider University, BP 145, 07000 Biskra, Algeria |
| Аффилиация | Belghachi, A; Laboratory of Semiconductor Devices Physics, Physics Department, University of Béchar, PO Box 417, Béchar 08000, Algeria |
| Аффилиация | Meftah, A M; Laboratory of Metallic and Semiconducting Materials, Faculty of Science and Engineering, Mohamed Kheider University, BP 145, 07000 Biskra, Algeria |
| Выпуск | 21 |
