| Автор | O Zsebök |
| Автор | J V Thordson |
| Автор | B Nilsson |
| Автор | T G Andersson |
| Дата выпуска | 2001-03-01 |
| dc.description | Different types of InGaAs/GaAs deep-etched quantum wire (QWI) structure were successfully fabricated by high-energy electron beam lithography on GaAs(100) surfaces. A selective wet-chemical-etching technique, preceded by chemically assisted ion-beam etching, reduced the controlled lateral dimensions of the wires to ~10 nm due to strong under-etching. Various types of wire in the [011̅] and [011] crystallographic directions were prepared by the combined etching method. The side-walls of the wires were defined by the selectively etched low-index crystallographic planes. A molecular-beam-epitaxy-grown graded InGaAs/GaAs quantum well was realized at the narrow `neck' region of the wires, thus providing the strongest possible lateral confinement of the QWI structure. Consequently, similarly to the selective growth of self-narrowing ridge structures, selective wet-chemical etching induced a controlled self-narrowing of the wire structures. Scanning electron microscopy images of the QWI nanostructures showed smooth side-walls defined by the crystallographic planes. Low-excitation photoluminescence spectroscopy of the structures revealed extremely high quantum efficiency and a size-dependent blue shift as a result of the strong lateral confinement. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques |
| Тип | paper |
| DOI | 10.1088/0957-4484/12/1/307 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 12 |
| Первая страница | 32 |
| Последняя страница | 37 |
| Аффилиация | O Zsebök; Applied Semiconductor Physics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE-412 96 Göteborg, Sweden |
| Аффилиация | J V Thordson; Applied Semiconductor Physics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE-412 96 Göteborg, Sweden |
| Аффилиация | B Nilsson; Applied Semiconductor Physics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE-412 96 Göteborg, Sweden |
| Аффилиация | T G Andersson; Applied Semiconductor Physics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE-412 96 Göteborg, Sweden |
| Выпуск | 1 |
