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Автор A G Milekhin
Автор A I Nikiforov
Автор O P Pchelyakov
Автор S Schulze
Автор D R T Zahn
Дата выпуска 2002-02-01
dc.description Self-organized Ge quantum dot (QD) superlattices having properties of two- and zero-dimensional structures were investigated by Raman spectroscopy. Longitudinal optical (LO) Ge phonons, longitudinal (L) Ge-Si phonons and folded longitudinal acoustic (LA) phonons superimposed on a strong continuous emission were studied under resonant conditions. The measured phonon frequencies of folded LA phonons up to 15th order are in good agreement with those calculated using the Rytov model applied usually to planar superlattices. The low-frequency continuous emission can be explained in terms of a breakdown of crystal momentum conservation for resonant Raman processes involving acoustic phonons. A frequency enlargement of the continuous emission band and a downward shift of the LO Ge phonons with increasing excitation energy (2.54-2.71 eV) are attributed to electron and phonon size confinement in the small Ge QDs resonantly contributing to the scattering process. The size of the QDs involved in the process is estimated from analysis of the frequency position of their optical phonons.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Size-selective Raman scattering in self-assembled Ge/Si quantum dot superlattices
Тип paper
DOI 10.1088/0957-4484/13/1/312
Electronic ISSN 1361-6528
Print ISSN 0957-4484
Журнал Nanotechnology
Том 13
Первая страница 55
Последняя страница 58
Выпуск 1

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