| Автор | Serge Ecoffey |
| Автор | Didier Bouvet |
| Автор | Adrian M Ionescu |
| Автор | Pierre Fazan |
| Дата выпуска | 2002-06-01 |
| dc.description | With this work we have assessed the minimum thickness and grain size realizable for a polysilicon (poly-Si) layer deposited with a low-pressure chemical vapour deposition technique. Three different approaches using pure silane in a standard horizontal reactor have been evaluated: (i) a direct poly-Si deposition, (ii) a hemispherical silicon grain deposition and (iii) an amorphous silicon (a-Si) deposition followed by crystallization thermal annealing. It has been demonstrated that the a-Si/crystallization process seems to be the best candidate for the deposition of ultra-thin poly-Si films. However, it involves process innovation in both the nucleation and annealing phases. With this method we have succeeded in the deposition of uniform 6 nm poly-Si layers with grain sizes around 10-20 nm. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Low-pressure chemical vapour deposition of nanograin polysilicon ultra-thin films |
| Тип | paper |
| DOI | 10.1088/0957-4484/13/3/310 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 13 |
| Первая страница | 290 |
| Последняя страница | 293 |
| Аффилиация | Serge Ecoffey; Swiss Federal Institute of Technology, Electronic Laboratories, CH-1015 Lausanne, Switzerland |
| Аффилиация | Didier Bouvet; Swiss Federal Institute of Technology, Electronic Laboratories, CH-1015 Lausanne, Switzerland |
| Аффилиация | Adrian M Ionescu; Swiss Federal Institute of Technology, Electronic Laboratories, CH-1015 Lausanne, Switzerland |
| Аффилиация | Pierre Fazan; Swiss Federal Institute of Technology, Electronic Laboratories, CH-1015 Lausanne, Switzerland |
| Выпуск | 3 |
