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Автор Aloke Kanjilal
Дата выпуска 2002-10-01
dc.description The formation of nanoquasicrystallites in stable icosahedral Al–Cu–Fe quasicrystalline thin films by implementing an indirect heating method from a single source is discussed in this paper. The final composition of the quasicrystalline thin films is found to be Al<sub>62.9</sub>Cu<sub>24.6</sub>Fe<sub>12.5</sub> using x-ray fluorescence spectroscopy. The icosahedral nanoquasicrystallites formation is studied by glancing-angle x-ray diffraction and transmission electron microscopy. The size of the nanoquasicrystallites is estimated to be 4–20 nm. The density of nanoquasicrystallites is calculated as (1 ± 2) × 10<sup>12</sup> cm<sup>−2</sup>. The improvement of the icosahedral phase formation with increasing annealing temperature is also verified by measuring the change in resistivity with temperature in the range 10–300 K. The resistivity of the best film, which is obtained by annealing the as-deposited films at 700<sup>°</sup>C for 1 h, is calculated to be ∼2000μΩ cm at room temperature and ∼4000μΩ cm at 10 K.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Nanoquasicrystallites formation in stable icosahedral Al–Cu–Fe quasicrystalline thin films
Тип paper
DOI 10.1088/0957-4484/13/5/329
Electronic ISSN 1361-6528
Print ISSN 0957-4484
Журнал Nanotechnology
Том 13
Первая страница 682
Последняя страница 685
Аффилиация Aloke Kanjilal; Department of Physics and Astronomy, University of Aarhus, Ny Munkegade, DK-8000 Aarhus C, Denmark
Выпуск 5

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