| Автор | Jin, Peng |
| Автор | Ye, X L |
| Автор | Wang, Z G |
| Дата выпуска | 2005-12-01 |
| dc.description | InAs was deposited by molecular beam epitaxy (MBE) on a GaAs substrate with an intentional temperature gradient from centre to edge. Two-dimensional (2D) to three-dimensional (3D) morphology evolution was found along the direction in which the substrate temperature was decreasing. Quantum dots (QDs) with density as low as ∼8 × 10<sup>6</sup> cm<sup>−2</sup> were formed in some regions. We attribute the morphological evolution to the temperature-dependent desorption of deposited indium and the intermixing between deposited indium and gallium from the buffer. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy |
| Тип | paper |
| DOI | 10.1088/0957-4484/16/12/005 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 16 |
| Первая страница | 2775 |
| Последняя страница | 2778 |
| Аффилиация | Jin, Peng; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Ye, X L; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Wang, Z G; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Выпуск | 12 |
