↔ (3 × 3) phase transition in Pb/Ge(111) and Sn/Ge(111): a phenomenological study on the phase transition anomalies and the role of defects
Cano, A; Levanyuk, A P; Michel, E G; Cano, A; Departamento de Física de la Materia Condensada C-III, Universidad Autónoma de Madrid, E-28049 Madrid, Spain; Levanyuk, A P; Departamento de Física de la Materia Condensada C-III, Universidad Autónoma de Madrid, E-28049 Madrid, Spain; Michel, E G; Departamento de Física de la Materia Condensada C-III, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
Журнал:
Nanotechnology
Дата:
2005-02-01
Аннотация:
A phenomenological study of the phase transitions occurring in the adsorption systems Pb/Ge(111) and Sn/Ge(111) is presented. The starting point of such a study is the Landau theory. The critical behaviour expected theoretically for the two interfaces, and the corresponding influence of defects, are discussed in detail. Symmetry arguments show that, contrary to general belief, the critical behaviours of Pb/Ge(111) and Sn/Ge(111) are essentially different. The Landau-like approach employed to study the influence of defects provides a consistent and general manner to interpret the existing experimental data. Special attention is paid to the influence of hopping defects in Sn/Ge(111).
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