| Автор | Lei, W |
| Автор | Chen, Y H |
| Автор | Xu, B |
| Автор | Ye, X L |
| Автор | Zeng, Y P |
| Автор | Wang, Z G |
| Дата выпуска | 2005-09-01 |
| dc.description | The phonons of self-assembled InAs/InAlAs/InP quantum wires (QWRs) have been studied by Raman scattering. The QWR LO phonons show an unusual frequency shift with the increase of the InAs deposited thickness due to dislocations. The QWR LO phonons are found to follow the selection rule of the LO phonons in bulk zinc-blende semiconductors. Because of the intermixing of In/Al atoms and the multiplication of dislocations, the post-growth thermal annealing treatment leads to a shift of the QWR LO phonons to lower frequency. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Raman study on self-assembled InAs/InAlAs/InP(001) quantum wires |
| Тип | paper |
| DOI | 10.1088/0957-4484/16/9/092 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 16 |
| Первая страница | 1974 |
| Последняя страница | 1977 |
| Аффилиация | Lei, W; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Chen, Y H; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Xu, B; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Ye, X L; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Zeng, Y P; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Wang, Z G; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Выпуск | 9 |
