| Автор | Chen, X Y |
| Автор | Shen, W Z |
| Автор | Chen, H |
| Автор | Zhang, R |
| Автор | He, Y L |
| Дата выпуска | 2006-01-28 |
| dc.description | We report on the realization of high electron mobility (over 10<sup>3</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>) in structure-ordered and lattice-strained hydrogenated nanocrystalline silicon (nc-Si:H) due to the decrease of conduction effective mass and phonon scattering. The nc-Si:H thin films were grown on crystalline silicon substrates by plasma-enhanced chemical vapour deposition through the radio-frequency power to properly control the chemical reactions of H atoms with the Si–Si network. The electron mobility and concentration in the nc-Si:H have been extracted with the aid of magnetic-field-dependent Hall effect measurements. X-ray diffraction, Raman, and infrared transmission experiments have been employed to yield information about the lattice strain and structural order in the Si nanocrystals. The room-temperature experimental mobility has been well explained by a generalized Drude transport model unifying both the diffusive and ballistic transport mechanisms. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | High electron mobility in well ordered and lattice-strained hydrogenated nanocrystalline silicon |
| Тип | paper |
| DOI | 10.1088/0957-4484/17/2/042 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 17 |
| Первая страница | 595 |
| Последняя страница | 599 |
| Аффилиация | Shen, W Z; |
| Аффилиация | Chen, X Y; Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, People’s Republic of China |
| Аффилиация | Chen, H; Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, People’s Republic of China |
| Аффилиация | Zhang, R; Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, People’s Republic of China |
| Аффилиация | He, Y L; Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, People’s Republic of China |
| Выпуск | 2 |
