| Автор | Chen, Y H |
| Автор | Jin, P |
| Автор | Liang, L Y |
| Автор | Ye, X L |
| Автор | Wang, Z G |
| Автор | Martinez, Arturo I |
| Дата выпуска | 2006-05-14 |
| dc.description | The wetting layer (WL) in InAs/GaAs quantum-dot systems has been studied by reflectance difference spectroscopy (RDS). Two structures related to the heavy-hole (HH) and light-hole (LH) related transitions in the WL have been observed. On the basis of a calculation model that takes into account the segregation effect and exciton binding energies, the amount of InAs in the WL (t<sub>WL</sub>) and its segregation coefficient (R) have been determined from the HH and LH transition energies. The evolutions of t<sub>WL</sub> and R exhibit a close relation to the growth modes. Before the formation of InAs dots, t<sub>WL</sub> increases linearly from ∼1 to ∼1.6 monolayer (ML), while R increases almost linearly from ∼0.8 to ∼0.85. After the onset of dot formation, t<sub>WL</sub> is saturated at ∼1.6 ML and R decreases slightly from 0.85 to 0.825. The variation of t<sub>WL</sub> can be interpreted by using an equilibrium model. Different variations of in-plane optical anisotropy before and after dot formation have been observed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy |
| Тип | paper |
| DOI | 10.1088/0957-4484/17/9/022 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 17 |
| Первая страница | 2207 |
| Последняя страница | 2211 |
| Аффилиация | Chen, Y H; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Jin, P; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Liang, L Y; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Ye, X L; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Wang, Z G; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Martinez, Arturo I; Institute of Physics, National Autonomous University of Mexico, Mexico City, Mexico |
| Выпуск | 9 |
