| Автор | Lee, J H |
| Автор | Wang, Zh M |
| Автор | Liang, B L |
| Автор | Black, W T |
| Автор | Kunets, Vas P |
| Автор | Mazur, Yu I |
| Автор | Salamo, G J |
| Дата выпуска | 2006-05-14 |
| dc.description | Self-organized InGaAs quantum dot chains grown by molecular beam epitaxy were investigated using vertical stacking techniques on pre-patterned GaAs(100) substrates. The results demonstrate the formation of quantum dot (QD) chains only on desired spatial regions. In addition to QD chains, the results show that almost any shape of lines of QDs are possible depending on the faceted pre-patterned substrate. The experimental results suggest that this approach has the potential to be used to fabricate single QD chains or necklaces or almost any pattern. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Selective growth of InGaAs/GaAs quantum dot chains on pre-patterned GaAs(100) |
| Тип | paper |
| DOI | 10.1088/0957-4484/17/9/034 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 17 |
| Первая страница | 2275 |
| Последняя страница | 2278 |
| Аффилиация | Lee, J H; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Wang, Zh M; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Liang, B L; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Black, W T; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Kunets, Vas P; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Mazur, Yu I; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Salamo, G J; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Выпуск | 9 |
