| Автор | Yu, Zhaoning |
| Автор | Gao, He |
| Автор | Chou, Stephen Y |
| Дата выпуска | 2007-02-14 |
| dc.description | To optimize nanoimprint lithography (NIL), it is essential to be able to characterize and control the NIL process in situ and in real time. Recently we have developed a real-time imprint monitoring by the scattering-of-light (RIMS) approach, which allows us to detect the degree of resist deformation and the duration of resist penetration by a mould during the imprint process in real time. In this paper we report the performances of RIMS under a broad range of working conditions. RIMS data shows that the resist penetration is facilitated by increasing processing temperature, pressure and the resist film thickness; a prolonged pre-NIL resist baking step, on the other hand, has the effect of slowing it down. Our results provide further demonstration of the effectiveness of this method under different working conditions. RIMS measurements show not only how long an imprint takes to complete, but also how an imprint progresses with time and how it is affected by differences in processing parameters. These measurements provide information crucial for a better understanding and process optimization in NIL. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | RIMS (real-time imprint monitoring by scattering of light) study of pressure, temperature and resist effects on nanoimprint lithography |
| Тип | paper |
| DOI | 10.1088/0957-4484/18/6/065304 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 18 |
| Первая страница | 65304 |
| Последняя страница | 65307 |
| Аффилиация | Yu, Zhaoning; NanoStructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Аффилиация | Gao, He; NanoStructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Аффилиация | Chou, Stephen Y; NanoStructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Выпуск | 6 |
