Автор |
AbuWaar, Ziad Y |
Автор |
Marega, E |
Автор |
Mortazavi, M |
Автор |
Salamo, G J |
Дата выпуска |
2008-08-20 |
dc.description |
We present a study of photoluminescence (PL) from uncapped non-oxidized and oxidized InAs quantum dots (QDs) on GaAs substrate as a function of the thickness of a GaAs capping layer. A photoluminescence system in ultra-high vacuum that was coupled onto a molecular beam epitaxy chamber was used in order to avoid the oxidation of the quantum dot surface. We report for the first time a PL emission obtained from uncapped as-grown (non-oxidized) InAs QDs. We also report a dramatic change in the energy position and intensity of the PL as the quantum dots get closer to the top surface of the structure and make a direct comparison between the PL from non-oxidized and oxidized uncapped InAs/GaAs QDs. On the basis of these observations, we offer a physical explanation, based on oxidized versus non-oxidized uncapped QDs, for the discrepancies between previously reported results. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Копирайт |
IOP Publishing Ltd |
Название |
In situ photoluminescence study of uncapped InAs/GaAs quantum dots |
Тип |
paper |
DOI |
10.1088/0957-4484/19/33/335712 |
Electronic ISSN |
1361-6528 |
Print ISSN |
0957-4484 |
Журнал |
Nanotechnology |
Том |
19 |
Первая страница |
335712 |
Последняя страница |
335715 |
Аффилиация |
AbuWaar, Ziad Y; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA ; Department of Physics, University of Jordan, Amman, 11942, Jordan |
Аффилиация |
Marega, E; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA ; Departamento de Física e Ciência dos Materiais, Instituto de Física de São Carlos-USP, São Carlos SP 13560-970, Brazil |
Аффилиация |
Mortazavi, M; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
Аффилиация |
Salamo, G J; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
Выпуск |
33 |