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Автор AbuWaar, Ziad Y
Автор Marega, E
Автор Mortazavi, M
Автор Salamo, G J
Дата выпуска 2008-08-20
dc.description We present a study of photoluminescence (PL) from uncapped non-oxidized and oxidized InAs quantum dots (QDs) on GaAs substrate as a function of the thickness of a GaAs capping layer. A photoluminescence system in ultra-high vacuum that was coupled onto a molecular beam epitaxy chamber was used in order to avoid the oxidation of the quantum dot surface. We report for the first time a PL emission obtained from uncapped as-grown (non-oxidized) InAs QDs. We also report a dramatic change in the energy position and intensity of the PL as the quantum dots get closer to the top surface of the structure and make a direct comparison between the PL from non-oxidized and oxidized uncapped InAs/GaAs QDs. On the basis of these observations, we offer a physical explanation, based on oxidized versus non-oxidized uncapped QDs, for the discrepancies between previously reported results.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт IOP Publishing Ltd
Название In situ photoluminescence study of uncapped InAs/GaAs quantum dots
Тип paper
DOI 10.1088/0957-4484/19/33/335712
Electronic ISSN 1361-6528
Print ISSN 0957-4484
Журнал Nanotechnology
Том 19
Первая страница 335712
Последняя страница 335715
Аффилиация AbuWaar, Ziad Y; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA ; Department of Physics, University of Jordan, Amman, 11942, Jordan
Аффилиация Marega, E; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA ; Departamento de Física e Ciência dos Materiais, Instituto de Física de São Carlos-USP, São Carlos SP 13560-970, Brazil
Аффилиация Mortazavi, M; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA
Аффилиация Salamo, G J; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA
Выпуск 33

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