| Автор | Morton, Keith J |
| Автор | Nieberg, Gregory |
| Автор | Bai, Shufeng |
| Автор | Chou, Stephen Y |
| Дата выпуска | 2008-08-27 |
| dc.description | We demonstrate wide-area fabrication of sub-40 nm diameter, 1.5 µm tall, high aspect ratio silicon pillar arrays with straight sidewalls by combining nanoimprint lithography (NIL) and deep reactive ion etching (DRIE). Imprint molds were used to pre-pattern nanopillar positions precisely on a 200 nm square lattice with long range order. The conventional DRIE etching process was modified and optimized with reduced cycle times and gas flows to achieve vertical sidewalls; with such techniques the pillar sidewall roughness can be reduced below 8 nm (peak-to-peak). In some cases, sub-50 nm diameter pillars, 3 µm tall, were fabricated to achieve aspect ratios greater than 60:1. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Wafer-scale patterning of sub-40 nm diameter and high aspect ratio (>50:1) silicon pillar arrays by nanoimprint and etching |
| Тип | paper |
| DOI | 10.1088/0957-4484/19/34/345301 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 19 |
| Первая страница | 345301 |
| Последняя страница | 345306 |
| Аффилиация | Chou, Stephen Y; |
| Аффилиация | Morton, Keith J; Nanostructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Аффилиация | Nieberg, Gregory; Nanostructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Аффилиация | Bai, Shufeng; Nanostructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Выпуск | 34 |
