| Автор | Liu, Zhihong |
| Автор | Zhang, Hui |
| Автор | Wang, Lei |
| Автор | Yang, Deren |
| Дата выпуска | 2008-09-17 |
| dc.description | Nickel silicide nanowire arrays have been achieved by the decomposition of SiH<sub>4</sub> on Ni foil at 650 °C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100–200 nm and tips with diameter of about 10–50 nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7 V µm<sup>−1</sup>, and the field enhancement factor is as high as 4280, so the arrays have promising applications as emitters. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil |
| Тип | paper |
| DOI | 10.1088/0957-4484/19/37/375602 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 19 |
| Первая страница | 375602 |
| Последняя страница | 375605 |
| Аффилиация | Yang, Deren; |
| Аффилиация | Liu, Zhihong; State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China |
| Аффилиация | Zhang, Hui; State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China |
| Аффилиация | Wang, Lei; State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China |
| Выпуск | 37 |
