| Автор | Liang, B L |
| Автор | Mazur, Yu I |
| Автор | Kunets, Vas P |
| Автор | Wang, Zh M |
| Автор | Salamo, G J |
| Автор | DeCuir, E A |
| Автор | Passmore, B |
| Автор | Manasreh, M O |
| Дата выпуска | 2008-02-13 |
| dc.description | Photoluminescence (PL) of InAs/GaAs surface quantum dots (QDs) is enhanced by implanting a silicon-doped GaAs interlayer beneath surface QDs. It is observed that setting the doping concentration to 2.3 × 10<sup>17</sup> cm<sup>−3</sup> in the doped GaAs interlayer spaced 10 nm from the surface QDs results in optimal QD PL, i.e., highest intensity and narrowest linewidth. This improvement is attributed to the effective enhancement of the photo-excited carrier capture into the surface QDs and a filling of surface states due to free-carrier transfer from the doped GaAs layer to the surface QDs. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Enhanced photoluminescence from InAs/GaAs surface quantum dots by using a Si-doped interlayer |
| Тип | paper |
| DOI | 10.1088/0957-4484/19/6/065705 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 19 |
| Первая страница | 65705 |
| Последняя страница | 65709 |
| Аффилиация | Liang, B L; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Mazur, Yu I; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Kunets, Vas P; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Wang, Zh M; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Salamo, G J; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | DeCuir, E A; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Passmore, B; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Manasreh, M O; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA |
| Выпуск | 6 |
