GaN/ZnO nanorod light emitting diodes with different emission spectra
Ng, A M C; Xi, Y Y; Hsu, Y F; Djurišić, A B; Chan, W K; Gwo, S; Tam, H L; Cheah, K W; Fong, P W K; Lui, H F; Surya, C; Ng, A M C; Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, People’s Republic of China; Xi, Y Y; Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, People’s Republic of China; Hsu, Y F; Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, People’s Republic of China; Djurišić, A B; Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, People’s Republic of China ;; Chan, W K; Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, People’s Republic of China; Gwo, S; Department of Physics, National Tsing Hua University 101, Sec. 2, Huang-Fu Road, Hsinchu 300, Taiwan; Tam, H L; Department of Physics, Hong Kong Baptist University, Waterloo Road, Kowloon Tong, Hong Kong; Cheah, K W; Department of Physics, Hong Kong Baptist University, Waterloo Road, Kowloon Tong, Hong Kong; Fong, P W K; Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong; Lui, H F; Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong; Surya, C; Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
Журнал:
Nanotechnology
Дата:
2009-11-04
Аннотация:
Light emitting diodes (LEDs) consisting of p-GaN epitaxial films and n-ZnO nanorods have been fabricated and characterized. The rectifying behavior and emission spectra were strongly dependent on the electronic properties of both GaN film and ZnO nanorods. Light emission under both forward and reverse bias was obtained in all cases, and emission spectra could be changed by annealing the ZnO nanorods. The emission spectra could be further tuned by using a GaN LED epiwafer as a substrate. Both forward and backward diode behavior has been observed and the emission spectra were significantly affected by both the properties of the GaN substrate and the annealing conditions for the ZnO nanorods.
1.228Мб