| Автор | Liang, Yixing |
| Автор | Murphy, Patrick |
| Автор | Li, Wen-Di |
| Автор | Chou, Stephen Y |
| Дата выпуска | 2009-11-18 |
| dc.description | We proposed and demonstrated a new approach to pressed self-perfection by liquefaction (P-SPEL), where a layer of SiO<sub>2</sub> is used as a stopper on one sidewall of gratings, to self-limit the final trench width in P-SPEL to a preset stopper layer thickness, allowing a precise control of the final trench width without the need to control any pressing parameters such as pressure, temperature and the gap between the pressing plate and the substrate. We achieved 20 nm wide trenches from a 90 nm original width, reducing the original trench by 450%. We also observed improvement in the trench width uniformity. Using the fabricated resist trenches as templates, 20 nm metal lines were achieved by lift-off. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Self-limited self-perfection by liquefaction for sub-20 nm trench/line fabrication |
| Тип | paper |
| DOI | 10.1088/0957-4484/20/46/465305 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 20 |
| Первая страница | 465305 |
| Последняя страница | 465310 |
| Аффилиация | Chou, Stephen Y; |
| Аффилиация | Liang, Yixing; NanoStructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Аффилиация | Murphy, Patrick; NanoStructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Аффилиация | Li, Wen-Di; NanoStructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Выпуск | 46 |
