| Автор | Doh, Yong-Joo |
| Автор | Yi, Gyu-Chul |
| Дата выпуска | 2010-03-12 |
| dc.description | We report on the electrical characteristics of few-layer graphene (FLG) field-effect devices with their various thicknesses. In combination with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)], FLG/ferroelectric devices exhibited nonvolatile resistance changes due to a polarization switching of the P(VDF/TrFE) layer. The bistability and retention properties were highly sensitive to the FLG thickness, which is attributed to a charge screening effect in FLG films. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Nonvolatile memory devices based on few-layer graphene films |
| Тип | paper |
| DOI | 10.1088/0957-4484/21/10/105204 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 21 |
| Первая страница | 105204 |
| Последняя страница | 105208 |
| Аффилиация | Doh, Yong-Joo; Department of Display and Semiconductor Physics, Sejong Campus, Korea University, Chungnam-Do 339-800, Republic of Korea ; Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea |
| Аффилиация | Yi, Gyu-Chul; Department of Physics and Astronomy and National Creative Research Initiative Center for Semiconductor Nanorods, Seoul National University, Seoul 151-747, Republic of Korea ; |
| Выпуск | 10 |
