| Автор | L S Pakula |
| Автор | H Yang |
| Автор | H T M Pham |
| Автор | P J French |
| Автор | P M Sarro |
| Дата выпуска | 2004-11-01 |
| dc.description | The fabrication and characteristics of CMOS compatible absolute pressure sensors for harsh environments are presented in this paper. The sensor which was fabricated using post-processing surface micromachining consists of 100 circular membranes with a total capacity of 14 pF. PECVD SiC was used due to its good mechanical properties, but since SiC has high resistivity, aluminium layers were used for electrodes. The stiction problems were avoided by using polyimide PI2610 as a sacrificial layer. The pressure sensors were fabricated and the change of capacitance over full pressure range, 5 bar, was 3.4 pF. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2004 IOP Publishing Ltd |
| Название | Fabrication of a CMOS compatible pressure sensor for harsh environments |
| Тип | paper |
| DOI | 10.1088/0960-1317/14/11/007 |
| Electronic ISSN | 1361-6439 |
| Print ISSN | 0960-1317 |
| Журнал | Journal of Micromechanics and Microengineering |
| Том | 14 |
| Первая страница | 1478 |
| Последняя страница | 1483 |
| Выпуск | 11 |
