| Автор | E V Astrova |
| Автор | T N Borovinskaya |
| Автор | A V Tkachenko |
| Автор | S Balakrishnan |
| Автор | T S Perova |
| Автор | A Rafferty |
| Автор | Y K Gun'ko |
| Дата выпуска | 2004-07-01 |
| dc.description | Pore formation by electrochemical etching of p-type silicon in organic electrolytes has been studied. (100)-oriented wafers of silicon were prepatterned using a standard lithographic process to form pits of a known spatial period that act as nucleation sites for the pore formation. It was found for the first time that, for the prepatterned samples, two types of macro-pores could be formed on the same substrate. The first type of pore originates from the pits obtained by the prepatterning process. The second type is formed spontaneously as a result of a self-organization process. These ‘additional’ pores appear if the period of the printed pit pattern is higher than the intrinsic spatial period of random pores for Si, of a certain resistivity. The two types of macro-pores manifest different morphologies. Non-patterned samples oriented in (100), (111) or (110) plane were also investigated. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2004 IOP Publishing Ltd |
| Название | Morphology of macro-pores formed by electrochemical etching of p-type Si |
| Тип | paper |
| DOI | 10.1088/0960-1317/14/7/024 |
| Electronic ISSN | 1361-6439 |
| Print ISSN | 0960-1317 |
| Журнал | Journal of Micromechanics and Microengineering |
| Том | 14 |
| Первая страница | 1022 |
| Последняя страница | 1028 |
| Выпуск | 7 |
