| Автор | Paul Jayachandran Joseph |
| Автор | Hollie A Kelleher |
| Автор | Sue Ann Bidstrup Allen |
| Автор | Paul A Kohl |
| Дата выпуска | 2005-01-01 |
| dc.description | The fabrication of air-channels for microelectromechanical systems and microfluidic devices using polynorbornene and polycarbonates as thermally or photolitically decomposable materials to form air-gaps in dielectric materials has been reported. In this study, the incompatibility of some overcoat polymers with the sacrificial materials was addressed. SiO<sub>2</sub> was used as a barrier layer for the fabrication of single- and multi-layer air-channels via different sacrificial and overcoat materials. The structural rigidity of SiO<sub>2</sub> mitigates problems associated with overcoat polymers that can easily deform at the processing temperature (overcoat cure or sacrificial decomposition temperature). The chemical inertness and low permeability of SiO<sub>2</sub> allows the use of solvent-cast polymers, for which the solvents would have otherwise dissolved the sacrificial material. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2005 IOP Publishing Ltd |
| Название | Improved fabrication of micro air-channels by incorporation of a structural barrier |
| Тип | paper |
| DOI | 10.1088/0960-1317/15/1/006 |
| Electronic ISSN | 1361-6439 |
| Print ISSN | 0960-1317 |
| Журнал | Journal of Micromechanics and Microengineering |
| Том | 15 |
| Первая страница | 35 |
| Последняя страница | 42 |
| Аффилиация | Paul Jayachandran Joseph; School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0100, USA |
| Аффилиация | Hollie A Kelleher; School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0100, USA |
| Аффилиация | Sue Ann Bidstrup Allen; School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0100, USA |
| Аффилиация | Paul A Kohl; School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0100, USA |
| Выпуск | 1 |
