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Автор P G Steeneken
Автор Th G S M Rijks
Автор J T M van Beek
Автор M J E Ulenaers
Автор J De Coster
Автор R Puers
Дата выпуска 2005-01-01
dc.description We report on measurements of the time-dependent capacitance of an RF MEMS shunt switch. A high time-resolution detection set-up is used to determine switching time and motion of the device. From the equation of motion the damping force is extracted. The measured damping force is found to be approximately proportional to the speed over the gap to the third power (F<sub>D</sub> ∝ v/z<sup>3</sup>), in good agreement with squeeze film damping theory. Significant influence of slip–flow effects on the motion is observed. Measurements at low pressure show underdamped harmonic oscillations in the opening motion and contact bounce effects in the closing motion. Effects of dielectric charging on the C–V curves are discussed. Experimental results are compared with electromechanical and damping simulations.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2005 IOP Publishing Ltd
Название Dynamics and squeeze film gas damping of a capacitive RF MEMS switch
Тип paper
DOI 10.1088/0960-1317/15/1/025
Electronic ISSN 1361-6439
Print ISSN 0960-1317
Журнал Journal of Micromechanics and Microengineering
Том 15
Первая страница 176
Последняя страница 184
Выпуск 1

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