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Автор Hattrick-Simpers, Jason R
Автор Tan, Zhuopeng
Автор Oguchi, Hiroyuki
Автор Chiu, Chun
Автор Heilweil, Edwin J
Автор Maslar, James E
Автор Bendersky, Leonid A
Дата выпуска 2011-10-01
dc.description In order to increase measurement throughput, a characterization scheme has been developed that accurately measures the hydrogen storage properties of materials in quantities ranging from 10 ng to 1 g. Initial identification of promising materials is realized by rapidly screening thin-film composition spread and thickness wedge samples using normalized IR emissivity imaging. The hydrogen storage properties of promising samples are confirmed through measurements on single-composition films with high-sensitivity (resolution <0.3 μg) Sievert's-type apparatus. For selected samples, larger quantities of up to ∼100 mg may be prepared and their (de)hydrogenation and micro-structural properties probed via parallel in situ Raman spectroscopy. Final confirmation of the hydrogen storage properties is obtained on ∼1 g powder samples using a combined Raman spectroscopy/Sievert's apparatus.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2011 National Institute for Materials Science
Название A combinatorial characterization scheme for high-throughput investigations of hydrogen storage materials
Тип paper
DOI 10.1088/1468-6996/12/5/054207
Electronic ISSN 1878-5514
Print ISSN 1468-6996
Журнал Science and Technology of Advanced Materials
Том 12
Первая страница 54207
Последняя страница 54212
Аффилиация Hattrick-Simpers, Jason R; Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
Аффилиация Tan, Zhuopeng; Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, USA
Аффилиация Oguchi, Hiroyuki; Institute for Materials Research, Tohoku University, Sendai 980 8577, Japan
Аффилиация Chiu, Chun; Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
Аффилиация Heilweil, Edwin J; Physics Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
Аффилиация Maslar, James E; Chemicals Science and Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
Аффилиация Bendersky, Leonid A; Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
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