A multi-layer interface partition model for nonequilibrium solidification
Cai, Yingwen; Fu, Hengzhi; Cai, Yingwen; School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai 200030, People's Republic of China; Shanghai Institute of Nuclear Research, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China;; Fu, Hengzhi; School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai 200030, People's Republic of China
Журнал:
Science and Technology of Advanced Materials
Дата:
2001-03-31
Аннотация:
The disadvantages of Aziz's interface partition model are summarized in this paper. Using transition state theory and the Maxwell–Boltzman distribution law, a multi-layer interface solute partition model (MLIPM) for dilute solution is advanced. It is shown that interface structure and roughening characteristics have significant effects on solute partitioning. Based upon an academic speculation of interface roughening behavior, both the partition processes of semiconductors and metals can be explained rationally by MLIPM. Comparisons with experimental results in Si(As, Ge, Bi, Sn) and Al(Cu, Sn, Ge, In) show quite good agreement; provided that the proper roughening law is given.
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