BiFeO<sub>3</sub>-doped (Na<sub>0.5</sub>K<sub>0.5</sub>)NbO<sub>3</sub> lead-free piezoelectric ceramics
Sun, Xueyi; Chen, Jun; Yu, Ranbo; Xing, Xianran; Qiao, Lijie; Liu, Guirong; Sun, Xueyi; Department of Physical Chemistry, Ministry of Education of China, University of Science and Technology Beijing, Beijing 100 083, People's Republic of China; Chen, Jun; Department of Physical Chemistry, Ministry of Education of China, University of Science and Technology Beijing, Beijing 100 083, People's Republic of China; Yu, Ranbo; Department of Physical Chemistry, Ministry of Education of China, University of Science and Technology Beijing, Beijing 100 083, People's Republic of China; Xing, Xianran; Department of Physical Chemistry, Ministry of Education of China, University of Science and Technology Beijing, Beijing 100 083, People's Republic of China; State Key Laboratory for Advanced Metals and Materials, Ministry of Education of China, University of Science and Technology Beijing, Beijing 100 083, People's Republic of China; Qiao, Lijie; Key Laboratory of Environmental Fracture, Ministry of Education of China, University of Science and Technology Beijing, Beijing 100 083, People's Republic of China; Liu, Guirong; Department of Physical Chemistry, Ministry of Education of China, University of Science and Technology Beijing, Beijing 100 083, People's Republic of China
Журнал:
Science and Technology of Advanced Materials
Дата:
2008-04-01
Аннотация:
Lead-free piezoelectric ceramics (1−x)(Na<sub>0.5</sub>K<sub>0.5</sub>)NbO<sub>3</sub>-xBiFeO<sub>3</sub> (x=0∼0.07) were synthesized by the solid-state reaction. Differential scanning calorimetry (DSC) measurements revealed that an increase in the amount of BiFeO<sub>3</sub> dopant resulted in a decrease in the orthorhombic-tetragonal and tetragonal-cubic phase transition temperature of the material. One percent BiFeO<sub>3</sub> additive suppressed grain growth, which not only benefits the sintering of ceramics but also enhances the piezoelectric and ferroelectric properties, where d<sub>33</sub>=145pC/N, k<sub>p</sub>=0.31, Q<sub>m</sub>=80, P<sub>r</sub>=11.3 μC cm<sup>−2</sup> and E<sub>c</sub>=16.5 kV cm<sup>−1</sup>. As x<sub>BF</sub>>0.01, both piezoelectric and ferroelectric properties decreased rapidly with an increasing amount of dopant.
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