| Автор | Jiao, Bao-Chen |
| Автор | Zhang, Xiao-Dan |
| Автор | Wei, Chang-Chun |
| Автор | Sun, Jian |
| Автор | Ni, Jian |
| Автор | Zhao, Ying |
| Дата выпуска | 2011-03-01 |
| dc.description | Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10<sup>−3</sup> Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10<sup>−3</sup> Ω·cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2011 Chinese Physical Society and IOP Publishing Ltd |
| Название | Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysisProject supported by Hi-Tech Research and Development Program of China (Grant Nos. 2007AA05Z436 and 2009AA050602), Science and Technology Support Project of Tianjin (Grant No. 08ZCKFGX03500), the National Basic Research Program of China (Grant Nos. 2011CB201605 and 2011CB201606), the National Natural Science Foundation of China (Grant No. 60976051), International Cooperation Project between China-Greece Government (Grant No. 2009DFA62580), and Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0295). |
| Тип | paper |
| DOI | 10.1088/1674-1056/20/3/037306 |
| Electronic ISSN | 2058-3834 |
| Print ISSN | 1674-1056 |
| Журнал | Chinese Physics B |
| Том | 20 |
| Первая страница | 37306 |
| Последняя страница | 37314 |
| Аффилиация | Jiao, Bao-Chen; Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China |
| Аффилиация | Zhang, Xiao-Dan; Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China |
| Аффилиация | Wei, Chang-Chun; Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China |
| Аффилиация | Sun, Jian; Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China |
| Аффилиация | Ni, Jian; Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China |
| Аффилиация | Zhao, Ying; Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China |
| Выпуск | 3 |
