| Автор | Fu Jun |
| Дата выпуска | 2009-08-01 |
| dc.description | High frequency intrinsic small-signal model parameter extraction for microwave SiGe heterojunction bipolar transistors is studied, with a focus on the main feedback elements including the emitter series resistor, internal and external base-collector capacitors as well as the base series resistor, all of which are important in determining the behavior of the device equivalent circuit. In accordance with the respective features of definition of the Y- and Z-parameters, a novel combined use of them succeeds in reasonably simplifying the device equivalent circuit and thus decoupling the extraction of base-collector capacitances from other model parameters. As a result, a very simple direct extraction method is proposed. The proposed method is applied for determining the SiGe HBT small-signal model parameters by taking numerically simulated Y- and Z-parameters as nominal “measurement data" with the help of a Taurus-device simulator. The validity of the method is preliminarily confirmed by the observation of certain linear relations of device frequency behavior as predicted by the corresponding theoretical analysis. Furthermore, the extraction results can be used to reasonably account for the dependence of the extracted model parameters on device geometry and process parameters, reflecting the explicit physical meanings of parameters, and especially revealing the distributed nature of the base series resistor and its complex interactions with base-collector capacitors. Finally, the accuracy of our model parameter extraction method is further validated by comparing the modeled and simulated S-parameters as a function of frequency. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2009 Chinese Institute of Electronics |
| Название | Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization |
| Тип | paper |
| DOI | 10.1088/1674-4926/30/8/084005 |
| Electronic ISSN | 2058-6140 |
| Print ISSN | 1674-4926 |
| Журнал | Journal of Semiconductors |
| Том | 30 |
| Первая страница | 84005 |
| Последняя страница | 84011 |
| Аффилиация | Fu Jun; Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
| Выпуск | 8 |
