| Автор | Zhu Yangjun |
| Автор | Miao Qinghai |
| Автор | Zhang Xinghua |
| Автор | Han Zhengsheng |
| Дата выпуска | 2009-09-01 |
| dc.description | It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the excessive thermotaxis effect of low current, a novel electrical measurement method of the peak junction temperature is presented in this paper. The method is called the thermal spectrum analysis method of transistors, simply designated TSA (thermal spectrum analysis method). Unlike the common method which uses a single measuring current, TSA uses multi-step currents to measure temperature-sensitive parameters. Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2009 Chinese Institute of Electronics |
| Название | A novel electrical measurement method of peak junction temperature based on the excessive thermotaxis effect of low current |
| Тип | paper |
| DOI | 10.1088/1674-4926/30/9/094005 |
| Electronic ISSN | 2058-6140 |
| Print ISSN | 1674-4926 |
| Журнал | Journal of Semiconductors |
| Том | 30 |
| Первая страница | 94005 |
| Последняя страница | 94008 |
| Выпуск | 9 |
