| Автор | Bu Jianhui |
| Автор | Bi Jinshun |
| Автор | Song Limei |
| Автор | Han Zhengsheng |
| Дата выпуска | 2010-01-01 |
| dc.description | Deep submicron partially depleted silicon on insulator (PDSOI) nMOSFETs were fabricated based on the 0.35 μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS). Mechanisms determining short-channel effects (SCE) in PDSOI nMOSFETs are clarified based on experimental results of threshold voltage dependence upon gate length. The effects of body bias, drain bias, temperature and body contact on the SCE have been investigated. The SCE in SOI devices is found to be dependent on body bias, drain bias and body contact. Floating body devices show a more severe reverse short channel effect (RSCE) than devices with body contact structure. Devices with low body bias and high drain bias show a more obvious SCE. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2010 Chinese Institute of Electronics |
| Название | Short channel effect in deep submicron PDSOI nMOSFETs |
| Тип | paper |
| DOI | 10.1088/1674-4926/31/1/014002 |
| Electronic ISSN | 2058-6140 |
| Print ISSN | 1674-4926 |
| Журнал | Journal of Semiconductors |
| Том | 31 |
| Первая страница | 14002 |
| Последняя страница | 14004 |
| Аффилиация | Bu Jianhui; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| Аффилиация | Bi Jinshun; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| Аффилиация | Song Limei; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| Аффилиация | Han Zhengsheng; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| Выпуск | 1 |
