Мобильная версия

Доступно журналов:

3 288

Доступно статей:

3 891 637

 

Скрыть метаданые

Автор Wu Chia-Song
Автор Chang Chien-Huang
Автор Liu Hsing-Chung
Автор Lin Tah-Yeong
Автор Wu Hsien-Ming
Дата выпуска 2010-01-01
dc.description This investigation explores a low-noise amplifier (LNA) with a coplanar waveguide (CPW) structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology in a Ka-band (26.5–40.0 GHz) microwave monolithic integrated circuit (MMIC). The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dB at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a V<sup>ds</sup> of 2 V and a V<sup>gs</sup> of −0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2010 Chinese Institute of Electronics
Название A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology
Тип paper
DOI 10.1088/1674-4926/31/1/015005
Electronic ISSN 2058-6140
Print ISSN 1674-4926
Журнал Journal of Semiconductors
Том 31
Первая страница 15005
Последняя страница 15008
Выпуск 1

Скрыть метаданые