| Автор | G G N Angilella |
| Автор | N H March |
| Автор | I A Howard |
| Автор | R Pucci |
| Дата выпуска | 2008-07-01 |
| dc.description | In earlier work by March and Matthai [Phil. Mag. Lett. 84 335 (2004)], the energy gaps E<sub>g</sub> of the diamond-type semiconductors C, Si, Ge and α-Sn were shown to correlate well with the mean interelectronic separation r<sub>s</sub> of the 4 valence electrons per atom. Furthermore for the III-V analogues such as GaAs and InSb, it was demonstrated that a useful extension could be effected by introducing additionally the electronegativity difference between the constituent atoms. Here, we consider available experimental data, and their interpretation, for such energy gaps, as a function of pressure. The intensity of the X-ray forbidden reflections will also be discussed under pressure. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | © 2008 IOP Publishing Ltd |
| Название | Pressure dependence of the energy gaps in diamond-type semiconductors, and their III-V analogues such as InSb |
| Тип | paper |
| DOI | 10.1088/1742-6596/121/3/032006 |
| Electronic ISSN | 1742-6596 |
| Print ISSN | 1742-6588 |
| Журнал | Journal of Physics: Conference Series |
| Том | 121 |
| Первая страница | 32006 |
| Последняя страница | 32010 |
| Выпуск | 3 |
