Metallization and superconductivity of molecular crystal BI<sub>3</sub> under pressure
S Onoda; K Shimizu; S Onoda; KYOKUGEN, Center for Quantum Science and Technology under Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan; K Shimizu; KYOKUGEN, Center for Quantum Science and Technology under Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan
Журнал:
Journal of Physics: Conference Series
Дата:
2008-07-01
Аннотация:
Electrical resistivity measurement of boron triiodide (BI<sub>3</sub>) have been performed at high pressures up to 70 GP<sub>a</sub>. At room temperature, the resistivity decreased rapidly with applying pressure. The temperature dependence of electrical resistance indicated metallization of BI<sub>3</sub> at 23 GP<sub>a</sub>. The superconducting transition was found above 27 GP<sub>a</sub>.
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