| Автор | Jie Xiong |
| Автор | Bowan Tao |
| Автор | Wenfeng Qin |
| Автор | Xiao Feng |
| Автор | Xiaoke Song |
| Автор | Fei Zhang |
| Автор | Yanrong Li |
| Дата выпуска | 2009-03-01 |
| dc.description | In this paper, a study regarding the epitaxial growth of Ce<sub>x</sub>Zr<sub>1-x</sub>O<sub>2</sub> film on biaxially textured Ni-5at.%W substrate and its use as a single buffer layer of a YBCO coated conductors was reported. Films of Ce-Zr mixed oxide were prepared by direct-current (d.c.) reactive magnetron sputtering with the two sputtering guns arranged symmetrically with respect to the substrate. In sputtering process, d.c. power of Zr was fixed in 200 W while that of Ce was varied with 30 W, 50 W, 75 W, and 100 W, respectively. It was confirmed that the composition of the films could be controlled with modulating power of Ce target. All samples exhibited good epitaxial growth with c-axis perpendicular to the substrate surface. Atomic force microscope revealed a continuous, dense, and crack-free surface morphology for Ce<sub>0.32</sub>Zr<sub>0.68</sub>O<sub>2</sub> thin films, which provided themselves as the good single buffer to the YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-δ</sub> (YBCO) coated conductors. High quality Ce<sub>0.32</sub>Zr<sub>0.68</sub>O<sub>2</sub> buffer layers up to 100-m length could be fabricated with production speed of about 1.2m/h. X-ray scans have been performed as a function of length to determine the crystallographic consistency of the epitaxial Ce<sub>0.32</sub>Zr<sub>0.68</sub>O<sub>2</sub> over length. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | © 2009 IOP Publishing Ltd |
| Название | Reel-to-reel continuous deposition of Ce<sub>x</sub>Zr<sub>1-x</sub>O<sub>2</sub> single buffer layer for YBCO coated conductors |
| Тип | paper |
| DOI | 10.1088/1742-6596/153/1/012036 |
| Electronic ISSN | 1742-6596 |
| Print ISSN | 1742-6588 |
| Журнал | Journal of Physics: Conference Series |
| Том | 153 |
| Первая страница | 12036 |
| Последняя страница | 12044 |
| Аффилиация | Jie Xiong; State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Republic of China |
| Аффилиация | Bowan Tao; State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Republic of China |
| Аффилиация | Wenfeng Qin; State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Republic of China |
| Аффилиация | Xiao Feng; State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Republic of China |
| Аффилиация | Xiaoke Song; State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Republic of China |
| Аффилиация | Fei Zhang; State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Republic of China |
| Аффилиация | Yanrong Li; State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Republic of China |
| Выпуск | 1 |
