| Автор | F Gomez-Marlasca |
| Автор | P Levy |
| Дата выпуска | 2009-05-01 |
| dc.description | We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature – a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | © 2009 IOP Publishing Ltd |
| Название | Resistance switching in silver – manganite contacts |
| Тип | paper |
| DOI | 10.1088/1742-6596/167/1/012036 |
| Electronic ISSN | 1742-6596 |
| Print ISSN | 1742-6588 |
| Журнал | Journal of Physics: Conference Series |
| Том | 167 |
| Первая страница | 12036 |
| Последняя страница | 12041 |
| Аффилиация | F Gomez-Marlasca; Materia Condensada GIA GAIANN CAC -CNEA, and Instituto de Nanociencia y Nanotecnologia, CNEA, Gral Paz 1499 (1650) San Martin, Pcia. Buenos Aires, Argentina |
| Аффилиация | P Levy; Materia Condensada GIA GAIANN CAC -CNEA, and Instituto de Nanociencia y Nanotecnologia, CNEA, Gral Paz 1499 (1650) San Martin, Pcia. Buenos Aires, Argentina |
| Выпуск | 1 |
